ZXMP2120G4TA
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Краткое описание:
P-Channel JFET, 200V, 200mA, 25R, SOT-223
Дополнительная информация
P-channel, single-element, silicon MOSFET for small signal applications. Features a 200V drain-source voltage (Vdss) and 200mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 25 Ohms. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching times with turn-on delay at 7ns and fall time at 15ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25R |
| Package/Case | SOT-223 |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 1000 |
| Input Capacitance | 100pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 25R |
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