ZXMP3A16DN8TA
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Краткое описание:
P-Channel JFET, 30V, 5.5A ID, 45mR Rds On, SOIC-8
Дополнительная информация
P-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element JFET designed for surface mounting in an SOIC-8 package. Features a continuous drain current of 5.5A, a drain-source voltage of 30V, and a maximum drain-source on-resistance of 45mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.1W. Includes a gate-to-source voltage rating of 20V and exhibits turn-on delay time of 3.8ns and fall time of 21.4ns. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| Polarity | P-CHANNEL |
| Fall Time | 21.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | SOIC |
| Current Rating | -5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Input Capacitance | 1.022nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 3.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 37.1ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
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