ZXMP3A16N8TA

ZXMP3A16N8TA - Diodes
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Краткое описание: P-Channel JFET, 30V, 6.7A ID, 40mR RdsOn, SOIC-8

Дополнительная информация

P-Channel MOSFET, SOIC-8 package, featuring a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 6.7A. Offers a low drain-source on-resistance (Rds On) of 40mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.8W. Includes fast switching times with a turn-on delay of 3.8ns and fall time of 21.4ns. This surface-mount device is lead-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Weight 0.00261oz
Polarity P-CHANNEL
Fall Time 21.4ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 40mR
Package/Case SOIC
Current Rating -6.7A
RoHS Compliant Yes
DC Rated Voltage -30V
Package Quantity 500
Input Capacitance 1.022nF
Number of Channels 1
Turn-On Delay Time 3.8ns
Radiation Hardening No
Turn-Off Delay Time 37.1ns
Reach SVHC Compliant Yes
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 70mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.7A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 40mR

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