ZXMP3F36N8TA
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Краткое описание:
P-Channel JFET, 30V, 9.6A ID, 20mR Rds On, SOP-8
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 9.6A. Offers a low drain-to-source resistance (Rds On Max) of 20mR. Operates within a temperature range of -55°C to 150°C. Packaged in an SO surface-mount package, ideal for tape and reel assembly.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 3000 |
| Input Capacitance | 2.265nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 3.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 1.56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.6A |
| Drain to Source Voltage (Vdss) | 30V |
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