ZXMP4A57E6TA
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P-Channel MOSFET, 40V, 3.7A, 80mR, SOT-26
Дополнительная информация
P-channel MOSFET featuring 40V drain-source voltage and 3.7A continuous drain current. Offers a low 80mΩ drain-source on-resistance. This silicon, metal-oxide semiconductor FET is housed in a compact SOT-26 surface-mount plastic package. Key electrical characteristics include 2.5ns turn-on delay and 21ns fall time, with a maximum power dissipation of 1.1W. Operating temperature range spans from -55°C to 150°C, and the component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Polarity | P-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-26 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 833pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 150mR |
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