ZXMP6A17DN8TA
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Краткое описание:
P-Channel MOSFET, 60V, 3.2A, 125mR, SOIC, 2-Element
Дополнительная информация
P-channel MOSFET, surface mount, SOIC package. Features -60V drain-source voltage, 3.2A continuous drain current, and 125mΩ maximum drain-source on-resistance. Offers 2 elements with a maximum power dissipation of 2.15W. Operates from -55°C to 150°C, with fast switching times including 2.6ns turn-on delay and 11.3ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| Polarity | P-CHANNEL |
| Fall Time | 11.3ns |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Package/Case | SOIC |
| Current Rating | -3.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 500 |
| Input Capacitance | 637pF |
| Power Dissipation | 2.15W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26.2ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.15W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 125mR |
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