ZXMS6005SGTA
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N-Channel JFET, 65V, 2A, 250mR, SOT-223, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 65V Drain to Source Voltage (Vdss), 2A Continuous Drain Current (ID) and Max Output Current. This surface mount transistor features a 250mR Drain to Source Resistance, 1V Threshold Voltage, and 6µs Turn-On Delay Time. Designed for low-side output configuration, it offers over-voltage and over-temperature fault protection. Packaged in a SOT-223 case, it operates within a -40°C to 125°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.55mm |
| Height | 1.65mm |
| Length | 6.55mm |
| Series | INTELLIFET® |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 19us |
| Interface | On/Off |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Fault Protection | Over Voltage, Over Temperature |
| Package Quantity | 1000 |
| Number of Outputs | 1 |
| Threshold Voltage | 1V |
| Max Output Current | 2A |
| Number of Channels | 1 |
| Turn-On Delay Time | 6us |
| Turn-Off Delay Time | 34us |
| Output Configuration | Low Side |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 65V |
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