ZXMS6006SGTA

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ZXMS6006SGTA - Diodes
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Краткое описание: 60V N-Channel JFET, 2.8A, 75mR, SOT-223, Surface Mount
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel silicon MOSFET for surface mounting, featuring 60V drain-source voltage and 2.8A continuous drain current. This single-element JFET offers 75mΩ drain-to-source resistance and a 1V threshold voltage. Designed with over-voltage and over-temperature fault protection, it operates from -40°C to 125°C. The device is housed in a TO-261AA (SOT-223) plastic package, supplied on tape and reel, and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.55mm
Height 1.65mm
Length 6.55mm
Series INTELLIFET®
Weight 0.000282oz
FET Type 1 N-Channel
Polarity N-CHANNEL
Fall Time 15us
Interface On/Off
Lead Free Lead Free
Packaging Tape and Reel
Nominal Vgs 1V
Package/Case SOT-223
RoHS Compliant Yes
Fault Protection Over Voltage, Over Temperature
Package Quantity 1000
Number of Outputs 1
Threshold Voltage 1V
Max Output Current 2.8A
Number of Channels 1
Turn-On Delay Time 8600ns
On-State Resistance 75mR
Radiation Hardening No
Turn-Off Delay Time 34000ns
Output Configuration Low Side
Reach SVHC Compliant No
Max Power Dissipation 1.6W
Max Operating Temperature 125°C
Min Operating Temperature -40°C
Drain to Source Resistance 75mR
Output Current per Channel 2.8A
Gate to Source Voltage (Vgs) 5V
Continuous Drain Current (ID) 2.8A
Drain to Source Voltage (Vdss) 60V

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