ZXT10P20DE6TA
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Краткое описание:
PNP BJT Transistor, 20V VCEO, 2.5A IC, 180MHz, SOT-23-6
Дополнительная информация
PNP silicon bipolar junction transistor for surface mount applications. Features a 20V collector-emitter breakdown voltage and a continuous collector current of -2.5A. Offers a maximum power dissipation of 1.1W and a transition frequency of 180MHz. Packaged in a 6-pin SOT-23-6, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 180MHz |
| Current Rating | -2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2.5A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -2.5A |
| Collector Base Voltage (VCBO) | -20V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -240mV |
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