ZXT12N20DXTA
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Краткое описание:
NPN BJT Transistor, 3.5A, 20V, 112MHz, MSOP
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 3.5A continuous collector current and a 20V collector-emitter breakdown voltage. Operates with a maximum power dissipation of 1.25W and a transition frequency of 112MHz. Packaged in a surface-mount MSOP-8 (MO-187AA) with dimensions of 3.1mm x 3.1mm x 0.95mm. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | MSOP |
| Max Frequency | 112MHz |
| Current Rating | 3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Transition Frequency | 112MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 1.25W |
| Gain Bandwidth Product | 112MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | 3.5A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 160mV |
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