ZXT12N50DXTA
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Краткое описание:
NPN BJT 3A 50V 132MHz MSOP Transistor
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and 3A continuous collector current. Operates with a 135mV collector-emitter saturation voltage and a 7.5V emitter-base voltage. Offers a 132MHz transition frequency and a maximum power dissipation of 1.25W. Packaged in a compact MSOP (MO-187AA, SUPERSOT) with lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | NPN |
| Frequency | 132MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | MSOP |
| Max Frequency | 132MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 1000 |
| Power Dissipation | 1.25W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 132MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.25W |
| Gain Bandwidth Product | 132MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | 3A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 135mV |
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