ZXT12P12DXTA
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Краткое описание:
PNP BJT Transistor, 3A I(C), 12V V(BR)CEO, 85MHz, MSOP
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a 2-element configuration, designed for surface mount applications. Features a 12V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -3A. Offers a transition frequency of 85MHz and a maximum power dissipation of 1.25W. Packaged in MSOP, this lead-free and RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | PNP |
| Frequency | 85MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | MSOP |
| Max Frequency | 85MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Power Dissipation | 1.25W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 85MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.25W |
| Gain Bandwidth Product | 85MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -3A |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 270mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -150mV |
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