ZXT13N20DE6TA
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 4.5A, 20V, SOT-23-6, Surface Mount
Дополнительная информация
NPN bipolar junction transistor for surface mount applications, featuring a 20V collector-emitter breakdown voltage and a 4.5A continuous collector current. This silicon transistor offers a 170mV collector-emitter saturation voltage and a 96MHz gain bandwidth product. Packaged in a SOT-23-6 surface mount case, it operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 1.1W. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 96MHz |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 96MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 96MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | 4.5A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 230mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 170mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
