ZXT13P40DE6TA

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ZXT13P40DE6TA - Diodes
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Краткое описание: PNP BJT Transistor, 40V, 3A, SOT-23-6, 115MHz
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -3A. Offers a maximum power dissipation of 1.7W and a transition frequency of 115MHz. Packaged in a SOT-23-6 surface mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.8mm
Height 1.3mm
Length 3.1mm
Weight 0.000529oz
Polarity PNP
Frequency 115MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-6
Max Frequency 115MHz
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 3000
Power Dissipation 1.7W
Number of Elements 1
Radiation Hardening No
Transition Frequency 115MHz
Max Breakdown Voltage 40V
Max Collector Current 3A
Max Power Dissipation 1.1W
Gain Bandwidth Product 115MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -3A
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 240mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -175mV

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