ZXTD619MCTA
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Краткое описание:
NPN BJT Transistor, 50V VCEO, 4A IC, 165MHz, DFN EP
Дополнительная информация
NPN silicon bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 4A maximum collector current. This surface mount device offers a 165MHz gain bandwidth product and 100MHz transition frequency, with a 270mV collector-emitter saturation voltage. Operating across a -55°C to 150°C temperature range, it has a 2.45W power dissipation and is packaged in a DFN EP, 8-pin plastic housing.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Frequency | 165MHz |
| Packaging | Tape and Reel |
| Package/Case | DFN EP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 2.45W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Power Dissipation | 2.45W |
| Gain Bandwidth Product | 165MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 320mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 270mV |
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