ZXTN07045EFFTA

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ZXTN07045EFFTA - Diodes
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Краткое описание: NPN BJT Transistor, 4A, 45V, 190MHz, SOT-23-3
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 4A. Operates with a 190MHz transition frequency and a 280mV collector-emitter saturation voltage. Housed in a 3-pin SOT-23-3 surface-mount plastic package, this lead-free and RoHS-compliant component offers a power dissipation of 2W and operates across a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Polarity NPN
Frequency 190MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 190MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Transition Frequency 190MHz
Max Breakdown Voltage 45V
Max Collector Current 4A
Max Power Dissipation 2W
Gain Bandwidth Product 190MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 45V
Collector-emitter Voltage-Max 280mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 280mV

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