ZXTN19020DZTA
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Краткое описание:
NPN BJT Transistor, 7.5A I(C), 20V V(BR)CEO, SOT-89
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications in a SOT-89 package. Features a maximum collector current of 7.5A, a collector-emitter breakdown voltage of 20V, and a maximum power dissipation of 4.46W. Offers a gain bandwidth product and transition frequency of 160MHz, with a collector-emitter saturation voltage of 200mV. Operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 160MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 7.5A |
| Max Power Dissipation | 4.46W |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 70V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 200mV |
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