ZXTN19055DZTA
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NPN BJT Transistor, 55V, 6A, 200MHz, SOT-89
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 6A continuous collector current, 55V collector-emitter breakdown voltage, and 250mV collector-emitter saturation voltage. Operates with a 200MHz transition frequency and a maximum power dissipation of 2.1W. Packaged in a SOT-89 case, this lead-free, RoHS-compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 200MHz |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 55V |
| Max Collector Current | 6A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 55V |
| Collector Emitter Saturation Voltage | 250mV |
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