ZXTN19100CGTA
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NPN BJT Transistor, 100V VCEO, 5.5A IC, 150MHz, SOT-223
Дополнительная информация
NPN bipolar junction transistor (BJT) for surface mount applications, featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 5.5A. This silicon transistor offers a 150MHz transition frequency and a 430mV collector-emitter saturation voltage. Packaged in a SOT-223 case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 5.3W. Compliant with RoHS and REACH SVHC standards, this lead-free component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 5.3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5.5A |
| Max Power Dissipation | 5.3W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 430mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 430mV |
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