ZXTN2020FTA
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NPN BJT Transistor, 100V VCEO, 4A IC, 130MHz, SOT-23
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-23 surface mount package. Features a 100V collector-emitter breakdown voltage and a 4A maximum collector current. Offers a 150mV collector-emitter saturation voltage and a 130MHz transition frequency. Designed for operation between -55°C and 150°C with a maximum power dissipation of 1.56W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Max Frequency | 130MHz |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 3000 |
| Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.56W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 150mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 150mV |
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