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NPN BJT Transistor, 60V, 1A, 150MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a 1A maximum collector current (IC). Operates with a 150MHz transition frequency and a 500mV collector-emitter saturation voltage. Packaged in a lead-free SOT-23 surface-mount case, this silicon transistor is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 150MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
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