ZXTN25012EFHTA

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ZXTN25012EFHTA - Diodes
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Краткое описание: NPN BJT Transistor, 6A, 12V, SOT-23, 260MHz
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor in a 3-pin SOT-23 surface mount package. Features a continuous collector current of 6A, collector-emitter breakdown voltage of 12V, and a maximum power dissipation of 1.25W. Offers a minimum DC current gain (hFE) of 500 and a transition frequency of 260MHz. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
hFE Min 500
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 260MHz
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Transition Frequency 260MHz
Max Breakdown Voltage 12V
Max Collector Current 6A
Max Power Dissipation 1.25W
Gain Bandwidth Product 260MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 6A
Collector Base Voltage (VCBO) 20V
Collector-emitter Voltage-Max 190mV
Collector Emitter Breakdown Voltage 12V
Collector Emitter Saturation Voltage 190mV

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