ZXTN25020DFLTA
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Краткое описание:
NPN BJT Transistor, 2A I(C), 20V V(CEO), 215MHz, SOT-23
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-23 package. Features a 2A maximum collector current and a 20V collector-emitter breakdown voltage. Offers a 215MHz gain bandwidth product and a 270mV collector-emitter saturation voltage. Operates from -55°C to 150°C with 350mW power dissipation. Surface mountable and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 215MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 215MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 215MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 215MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 270mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 270mV |
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