ZXTN25040DFHTA
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Краткое описание:
NPN BJT Transistor, 4A, 40V, 190MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor featuring a 4A continuous collector current and 40V collector-emitter breakdown voltage. This silicon transistor offers a 190MHz transition frequency and a minimum hFE of 300. Packaged in a 3-pin SOT-23 surface-mount case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W. The component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 300 |
| Polarity | NPN |
| Frequency | 190MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 190MHz |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Power Dissipation | 1.81W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 190MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.25W |
| Gain Bandwidth Product | 190MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 130V |
| Collector-emitter Voltage-Max | 190mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 210mV |
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