ZXTN4006ZTA

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ZXTN4006ZTA - Diodes
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Краткое описание: NPN BJT Transistor, 200V, 1A, SOT-89, Surface Mount
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for small signal applications. Features a 200V collector-emitter breakdown voltage and 1A continuous collector current. Housed in a SOT-89 surface mount package, this silicon transistor operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Lead-free and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001834oz
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-89
RoHS Compliant Yes
Package Quantity 1000
Radiation Hardening No
Reach SVHC Compliant Yes
Max Breakdown Voltage 200V
Max Collector Current 1A
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 1A
Collector Base Voltage (VCBO) 200V
Collector-emitter Voltage-Max 200V
Collector Emitter Breakdown Voltage 200V

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