ZXTP19020DGTA
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Краткое описание:
PNP BJT Transistor, 8A I(C), 20V V(BR)CEO, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for surface mount applications, featuring a maximum collector current of 8A and a collector-emitter breakdown voltage of 20V. This single-element transistor offers a minimum DC current gain (hFE) of 300 and a transition frequency of 176MHz. Packaged in a SOT-223 case, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5.3W. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| hFE Min | 300 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 176MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 176MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 8A |
| Max Power Dissipation | 5.3W |
| Gain Bandwidth Product | 176MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 25V |
| Collector-emitter Voltage-Max | 275mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 275mV |
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