ZXTP2006E6TA
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Краткое описание:
PNP BJT Transistor, 3.5A I(C), 20V V(CEO), SOT-23-6
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -3.5A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 110MHz. Packaged in a 6-pin SOT-23 case, this component is RoHS and REACH SVHC compliant. Maximum power dissipation is 1.7W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| hFE Min | 300 |
| Polarity | PNP |
| Frequency | 110MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 110MHz |
| Current Rating | -3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Power Dissipation | 1.7W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 110MHz |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -3.5A |
| Collector Base Voltage (VCBO) | 25V |
| Collector-emitter Voltage-Max | 130mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -110mV |
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