ZXTP25012EFHTA
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Краткое описание:
PNP BJT Transistor, 4A I(C), 12V V(BR)CEO, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-23 surface mount package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 12V. Offers a maximum power dissipation of 1.81W and a transition frequency of 310MHz. Operates across a temperature range of -55°C to 150°C. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 310MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 310MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.81W |
| Gain Bandwidth Product | 310MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 12V |
| Collector-emitter Voltage-Max | 210mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -210mV |
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