ZXTPS718MCTA

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ZXTPS718MCTA - Diodes
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Краткое описание: PNP BJT Transistor, 20V, 3.9A, 2450mW, 8-Pin DFN EP
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage, 3.9A continuous collector current, and 2450mW power dissipation. Housed in an 8-pin DFN EP package with exposed pad, measuring 3x2x0.78mm with a 0.65mm pin pitch. Offers a minimum DC current gain of 300 at 10mA/2V and a typical transition frequency of 180MHz. Operates across a temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
Type PNP
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 8
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case DFN EP
AEC Qualified No
Configuration Single Dual Collector
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2
Package Description Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.78
Package Length (mm) 3
Radiation Hardening No
Minimum DC Current Gain 300@10mA@2V|300@100mA@2V|150@2A@2V|15@6A@2V
Seated Plane Height (mm) 0.8
Max Operating Temperature 150°C
Maximum Power Dissipation 2450mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 3.9A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 180(Typ)MHz
Maximum Collector Base Voltage 25V
Maximum Collector-Emitter Voltage 20V

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