ZXTS1000E6TA

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ZXTS1000E6TA - Diodes
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Краткое описание: PNP BJT Transistor, 1.25A IC, 12V VCEO, SOT-23-6, 220MHz
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1.25A and a collector-emitter breakdown voltage of 12V. Operates with a transition frequency of 220MHz and a maximum power dissipation of 885mW. Packaged in a SOT-23-6 surface mount configuration, this RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.8mm
Height 1.3mm
Length 3.1mm
Weight 0.000529oz
Polarity PNP
Lead Free Contains Lead
Packaging Tape and Reel
Package/Case SOT-23-6
Current Rating -1.25A
RoHS Compliant Yes
DC Rated Voltage -12V
Package Quantity 3000
Radiation Hardening No
Transition Frequency 220MHz
Max Breakdown Voltage 12V
Max Collector Current 1.25A
Max Power Dissipation 885mW
Gain Bandwidth Product 220MHz
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 12V
Collector-emitter Voltage-Max 240mV
Collector Emitter Breakdown Voltage 12V

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