uPA2820T1S-E2-AT
Снят с производства
Увеличить
Краткое описание:
N-CH Power MOSFET 30V 22A 8-Pin HWSON SM
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 22A continuous drain current. This single MOSFET is housed in an 8-pin HWSON package with a 0.65mm pin pitch, measuring 3.1mm x 3mm x 0.8mm. Key electrical characteristics include a maximum drain-source on-resistance of 5.3 mOhm at 10V, typical gate charge of 50nC at 10V, and input capacitance of 2330pF at 10V. Operating across a temperature range of -55°C to 150°C, this surface-mount component offers a maximum power dissipation of 1500mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SAN34 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | HWSON |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Width (mm) | 3(Min) |
| Package Height (mm) | 0.8(Max) |
| Package Length (mm) | 3.1 |
| Seated Plane Height (mm) | 0.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 50nC |
| Typical Gate Charge @ Vgs | 50@10V|32@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 5.3@10VmOhm |
| Typical Input Capacitance @ Vds | 2330@10VpF |
| Maximum Continuous Drain Current | 22A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
