uPA2821T1L-E2-AT
Снят с производства
Краткое описание:
N-CH Power MOSFET 30V 26A 8-Pin HVSON SM
Дополнительная информация
N-channel enhancement mode power MOSFET in an 8-pin HVSON package, featuring a 30V drain-source voltage and 26A continuous drain current. This surface-mount component offers a low 3.8mOhm drain-source on-resistance at 10V gate-source voltage. Key specifications include a typical gate charge of 51nC at 10V and an input capacitance of 2490pF at 10V drain-source voltage. The compact plastic package measures 3.3mm x 3mm x 0.9mm with a 0.65mm pin pitch, suitable for high-density PCB layouts. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 1500mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SAN34 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | HVSON |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 3 |
| Package Family Name | SON |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 3.3 |
| Seated Plane Height (mm) | 0.9 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 51nC |
| Typical Gate Charge @ Vgs | 51@10V|32@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 3.8@10VmOhm |
| Typical Input Capacitance @ Vds | 2490@10VpF |
| Maximum Continuous Drain Current | 26A |
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