uPA2822T1L-E2-AT

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uPA2822T1L-E2-AT - Renesas
Краткое описание: N-CH Power MOSFET 30V 34A 8-Pin HVSON Surface Mount
Производитель Renesas
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, single quad drain triple source configuration, featuring a 30V maximum drain-source voltage and 34A maximum continuous drain current. This surface-mount component is housed in an 8-pin HVSON package with dimensions of 3.3mm x 3mm x 0.9mm and a 0.65mm pin pitch. It offers a low maximum drain-source on-resistance of 2.6 mOhm at 10V, with typical gate charge values of 83nC at 10V and 51nC at 5V. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 1500mW.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code SAN34
Pin Count 8
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case HVSON
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Package Width (mm) 3
Package Family Name SON
Package Height (mm) 0.9
Package Length (mm) 3.3
Seated Plane Height (mm) 0.9
Max Operating Temperature 150°C
Maximum Power Dissipation 1500mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 83nC
Typical Gate Charge @ Vgs 83@10V|51@5VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 2.6@10VmOhm
Typical Input Capacitance @ Vds 4660@10VpF
Maximum Continuous Drain Current 34A

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