12A02MH-TL-E
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Краткое описание:
PNP BJT Transistor, -12V, -1A, 450MHz, Low VCE(sat) SMD
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in an SMD/SMT package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 12V. Offers a low collector-emitter saturation voltage of -240mV and a transition frequency of 450MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 600mW. Packaged in tape and reel with 3000 units per reel.
| RoHS | Compliant |
| Width | 1.6mm |
| Height | 0.85mm |
| Length | 2mm |
| Polarity | PNP |
| Frequency | 450MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 450MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 600mW |
| Number of Elements | 1 |
| Transition Frequency | 450MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1A |
| Max Power Dissipation | 600mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 240mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -240mV |
