2DC4617Q-7
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NPN BJT Transistor, 50V, 150mA, 180MHz, SOT-523
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and 150mA maximum collector current (IC). Operates with a 180MHz transition frequency and offers a minimum hFE of 120. Housed in an ultra-miniature SOT-523 plastic package for surface mounting, with a maximum power dissipation of 150mW. Suitable for a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| hFE Min | 120 |
| Polarity | NPN |
| Frequency | 180MHz |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Package/Case | SOT-523 |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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