AP9977GH
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Краткое описание:
N-CH MOSFET 60V 11A DPAK TO-252 SMT Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET, 60V drain-source voltage, 11A continuous drain current. Features 100mΩ maximum drain-source on-resistance at 10V Vgs, 6nC typical gate charge at 4.5V Vgs, and 485pF typical input capacitance at 25V Vds. Packaged in a 3-pin DPAK (TO-252AA) surface-mount plastic housing with gull-wing leads, measuring 6.5mm length, 5.7mm width, and 2.3mm height. Operates from -55°C to 150°C with a maximum power dissipation of 21W.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-252AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 5.7 |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.3 |
| Package Length (mm) | 6.5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.4 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 21000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 100@10VmOhm |
| Typical Input Capacitance @ Vds | 485@25VpF |
| Maximum Continuous Drain Current | 11A |
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