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Краткое описание:
RF MOSFET N-CH 1000V 6.5A TO-247
Дополнительная информация
RF MOSFET Transistor, N-channel, single, enhancement mode. Features 1000V drain-source voltage and 6.5A continuous drain current. Operates up to 65MHz with 150W output power and 15dB typical power gain. Housed in a TO-247 package with 3 pins and a tab, suitable for through-hole mounting. Maximum power dissipation is 250000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-247AD |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 60991 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Output Power | 150W |
| Package/Case | TO-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Maximum Frequency | 65MHz |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.31(Max) |
| Typical Power Gain | 15dB |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 21.46(Max) |
| Package Length (mm) | 16.26(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Typical Input Capacitance @ Vds | 1700@50VpF |
| Maximum Continuous Drain Current | 6.5A |
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