ATF-36077-STR
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GaAs RF FET, 12GHz, 0.5dB NF, 45mA ID, 3V Vdss, SMD
Дополнительная информация
X-band RF small signal field-effect transistor featuring Gallium Arsenide (GaAs) technology and N-channel polarity. This high electron mobility FET offers a 12dB gain and a low 0.5dB noise figure, operating up to 12 GHz. Designed for surface mount applications, it utilizes a microstrip package with gold contact plating and supports a continuous drain current of 45mA with a drain-to-source voltage of 3V. The device operates across a wide temperature range from -65°C to 150°C and is RoHS compliant.
| Gain | 12dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 12GHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Technology | GAAS |
| Noise Figure | 0.5dB |
| Package/Case | SMD/SMT |
| Test Voltage | 1.5V |
| RoHS Compliant | Yes |
| Voltage Rating | 3V |
| Contact Plating | Gold |
| DC Rated Voltage | 3V |
| Package Quantity | 100 |
| Operating Frequency | 12 GHz |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 180mW |
| Nominal Supply Current | 10mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | -3V |
| Continuous Drain Current (ID) | 45mA |
| Drain to Source Voltage (Vdss) | 3V |
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