BC33716BU

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BC33716BU - Onsemi
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Краткое описание: NPN BJT Transistor, 45V VCEO, 800mA IC, 100MHz fT, TO-92
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a maximum collector current of 800mA and a collector-emitter voltage of 45V. This through-hole component offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operating across a temperature range of -55°C to 150°C, it has a power dissipation of 625mW and tin-matte contact plating. The device is RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Weight 0.179g
hFE Min 100
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Max Frequency 100MHz
Current Rating 800mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 1000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Collector Current 800mA
Max Power Dissipation 625mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV