BC546CTA
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NPN BJT Transistor, 65V VCEO, 100mA IC, 300MHz, TO-92
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 65V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 500mW. Packaged in an ammo pack, this lead-free and RoHS-compliant component is ideal for various electronic applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.24g |
| hFE Min | 110 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 300MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 65V |
| Package Quantity | 2000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 250mV |
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