BC547CBU

Производится
BC547CBU - Onsemi
Увеличить
Краткое описание: NPN BJT Transistor, 45V VCEO, 100mA IC, 300MHz fT, TO-92
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Epitaxial Silicon Transistor, TO-92-3 package, featuring a 45V Collector-Emitter Voltage (VCEO) and 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. This through-hole mounted component is RoHS compliant and supplied in bulk packaging.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Weight 0.179g
hFE Min 110
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92-3
Max Frequency 1MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 1000
Power Dissipation 500mW
Number of Elements 1
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Collector Current 100mA
Max Power Dissipation 500mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 250mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.