BC81840MTF

Снят с производства
BC81840MTF - Onsemi
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Краткое описание: NPN BJT Transistor, 25V VCEO, 800mA Ic, SOT-23, 100MHz
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 310mW. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 0.93mm
Length 2.9mm
Weight 0.03g
hFE Min 100
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 1
Power Dissipation 310mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 25V
Max Collector Current 800mA
Max Power Dissipation 310mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 700mV

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