BC856UE6327HTSA1
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PNP BJT Transistor, 65V VCEO, 100mA IC, 250MHz, SC-74, SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 65V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 0.1A (100mA). Offers a gain bandwidth product (hFE) of 250MHz and a maximum power dissipation of 250mW. Packaged in a RoHS compliant SC-74 surface mount package with tin matte contact plating. Operates across a wide temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1mm |
| Length | 2.9mm |
| hFE Min | 200 |
| Polarity | PNP |
| Frequency | 250MHz |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 250MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 650mV |
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