BFP183E7764HTSA1

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BFP183E7764HTSA1 - Infineon
Краткое описание: RF NPN Transistor SOT-143 12V 0.065A 250mW 8GHz
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade NPN RF Bipolar Junction Transistor (BJT) designed for surface-mount applications. Features a 12V maximum collector-emitter voltage and 65mA maximum DC collector current, with 250mW maximum power dissipation. This single, dual-emitter transistor offers a typical transition frequency of 8000MHz and a typical noise figure of 1.4dB. Housed in a 4-pin SOT-143 (TO-253AA) plastic package with gull-wing leads, it operates across a temperature range of -55°C to 150°C.
PCB 4
ECCN EAR99
Type NPN
Jedec TO-253AA
EU RoHS Yes
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 4
Automotive Yes
Lead Shape Gull-wing
Package/Case SOT-143
AEC Qualified Yes
Configuration Single Dual Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.9|1.7
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Typical Power Gain 22dB
Package Description Small Outline Transistor
Package Family Name SOT-143
Package Height (mm) 1(Max)
Package Length (mm) 2.9
Maximum Noise Figure 1.4(Typ)dB
Minimum DC Current Gain 70@15mA@8V
Seated Plane Height (mm) 1
Max Operating Temperature 150°C
Maximum Power Dissipation 250mW
Min Operating Temperature -55°C
Typical Input Capacitance 1.1pF
Typical Output Capacitance 0.3pF
Number of Elements per Chip 1
Operational Bias Conditions 8V/15mA
Maximum DC Collector Current 0.065A
Maximum Emitter Base Voltage 2V
Maximum Transition Frequency 8000(Typ)MHz
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

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