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Краткое описание:
NPN RF Transistor, 1.6GHz, 15V VCEO, 25mA IC, TO-236SMD
Дополнительная информация
NPN RF transistor in TO-236AB surface mount package. Features a 1.6GHz gain bandwidth product and 1GHz transition frequency, supporting operation up to 1.6GHz. Maximum collector current is 25mA with a collector-emitter voltage of 15V. Operates from -65°C to 150°C with 300mW power dissipation. RoHS compliant with tin contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.00709oz |
| Polarity | NPN |
| Frequency | 1.6GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236AB |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Operating Frequency | 1600 MHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 1GHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 25mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 1.6GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 2.5V |
| Continuous Collector Current | 25mA |
| Collector Base Voltage (VCBO) | 25V |
| Collector-emitter Voltage-Max | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
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