BFS505,115

Не рекомендуется для новых проектов
BFS505,115 - NXP
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Краткое описание: NPN BJT 9GHz 15V 18mA SOT-323 Surface Mount Transistor
Производитель NXP
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED FOR NEW DESIGN)

Дополнительная информация

NPN bipolar junction transistor for high-frequency applications, operating up to 9GHz. Features a 15V collector-emitter breakdown voltage and a maximum continuous collector current of 18mA. Housed in a compact SOT-323 surface-mount package with tin plating. Offers a gain of 17dB and 4dBm output power. Operates across a wide temperature range from -65°C to 175°C, with 150mW maximum power dissipation. RoHS compliant and lead-free.
Gain 17dB
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Polarity NPN
Frequency 9GHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-323
Max Frequency 9GHz
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1
Power Dissipation 150mW
Number of Elements 1
Output Power (dBm) 4dBm
Operating Frequency 9000 MHz
Radiation Hardening No
Transition Frequency 9GHz
Max Breakdown Voltage 15V
Max Collector Current 18mA
Max Power Dissipation 150mW
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 2.5V
Continuous Collector Current 18mA
Collector Base Voltage (VCBO) 20V
Collector-emitter Voltage-Max 15V
Collector Emitter Voltage (VCEO) 15V
Collector Emitter Breakdown Voltage 15V

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