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NPN Phototransistor, 70V VCEO, 50mA, 930nm, Through Hole
Дополнительная информация
NPN phototransistor with a 930nm wavelength, featuring a 70V collector-emitter breakdown voltage and a maximum collector current of 50mA. This through-hole component utilizes a domed lens and operates within a temperature range of -40°C to 100°C, with a power dissipation of 150mW. The silicon chip is housed in a 2-pin T-1 3/4 radial package, offering a 15° viewing angle.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.75mm |
| Height | 8.6mm |
| Length | 5.75mm |
| Polarity | NPN |
| Fall Time | 5us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 930nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 15° |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 4000 |
| Power Consumption | 150mW |
| Power Dissipation | 150mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 130mV |
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