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NPN Phototransistor 850nm 70V 50mA T-1 Through Hole
Дополнительная информация
NPN phototransistor chip for optical sensing applications. Features an 850nm wavelength, 70V collector-emitter breakdown voltage, and a maximum collector current of 50mA. Housed in a 3mm diameter, T-package with a domed, transparent lens and through-hole mounting. Operates across a temperature range of -40°C to 100°C with a 50° viewing angle.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Height | 4.5mm |
| Diameter | 3mm |
| Polarity | NPN |
| Fall Time | 2.3us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 50° |
| RoHS Compliant | No |
| Package Material | SILICON |
| Package Quantity | 5000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
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