BPW85C
Производится
Увеличить
Краткое описание:
NPN Phototransistor 70V 50mA 850nm T-1 Bulk
Дополнительная информация
NPN phototransistor chip for optical sensing applications. Features 850nm wavelength sensitivity and a 25° viewing angle. Operates with a 70V collector-emitter breakdown voltage and a 50mA maximum collector current. Housed in a T-1 package with a clear, domed lens, this through-hole component offers a 100mW power dissipation and operates within a -40°C to 100°C temperature range.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.4mm |
| Height | 4.5mm |
| Length | 3.4mm |
| Polarity | NPN |
| Fall Time | 2.3us |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT, Clear |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 25° |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 5000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
