BPX 89
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Краткое описание:
NPN Phototransistor Array, 9-Element, 35V, 50mA, 850nm, SDIP
Дополнительная информация
NPN phototransistor array featuring nine elements in a clear, domed lens style within a compact SDIP package. This through-hole mount component offers a collector-emitter breakdown voltage of 35V, a maximum collector current of 50mA, and a maximum power dissipation of 90mW. Operating across a temperature range of -40°C to 80°C, it exhibits a fall time of 6µs and a viewing angle of 36° at a wavelength of 850nm. The array is RoHS compliant and packaged in bulk.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.1mm |
| Height | 3.6mm |
| Length | 7.4mm |
| Polarity | NPN |
| Fall Time | 6us |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | SDIP |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 100 |
| Number of Elements | 9 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Breakdown Voltage | 35V |
